3N60-LC

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R205-747.C



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current

ID

3A

Pulsed Drain Current (Note 2)

IDM

6A

Avalanche Energy

Single Pulsed (Note 3)

EAS

108

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.4

V/ns

Power Dissipation

TO-251/TO-252

PD

48

W

SOP-8

2.1

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 30mH, IAS = 2.68A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤ 3.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note)

TO-251/TO-252

θJA

110

°C/W

SOP-8

190

°C/W

Junction to Case (Note)

TO-251/TO-252

θJC

2.6 (Note)

°C/W

SOP-8

59.5 (Note)

°C/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.