3N60-LC

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R205-747.C



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

600

V

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

10

μA

Gate- Source Leakage Current

Forward

IGSS

VGS=30V, VDS=0V

100

nA

Reverse

VGS=-30V, VDS=0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS,ID=250μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.5A

3.0

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0MHz

446

pF

Output Capacitance

COSS

46

pF

Reverse Transfer Capacitance

CRSS

4.5

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

VDS=100V, VGS=10V, ID=2.0A

IG=1mA (Note 1, 2)

15.2

nC

Gate-Source Charge

QGS

5.4

nC

Gate-Drain Charge

QGD

1.8

nC

Turn-On Delay Time (Note 1)

tD(ON)

VDS=30V, VGS=10V, ID=0.5A,

RG=25Ω (Note 1, 2)

6.4

ns

Turn-On Rise Time

tR

16.7

ns

Turn-Off Delay Time

tD(OFF)

39

ns

Turn-Off Fall Time

tF

27

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain-Source Diode

Forward Current

IS

3

A

Maximum Pulsed Drain-Source Diode Forward

Current

ISM

6

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=3.0A , VGS=0V

1.4

V

Reverse Recovery Time (Note 1)

trr

IS=3.0A , VGS=0V

di/dt=100A/μs

220

ns

Reverse Recovery Charge

Qrr

3

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.