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UF634L-S08-R 数据表(PDF) 3 Page - Unisonic Technologies |
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UF634L-S08-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 9 page ![]() UF634-HC Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 9 www.unisonic.com.tw QW-R502-B85.D ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-to-Source Voltage VGS ±30 V Drain-to-Source Voltage VDSS 250 V Continuous Drain Current ID 8.1 A Drain Current-Pulsed (Note 2) IDM 32.4 A Single Pulsed Avalanche Energy (Note 3) EAS 217 mJ Power Dissipation TO-220 PD 70 W TO-220F 38 W TO-252 50 W SOP-8 5 W Operating Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=30mH, IAS=3.8A, VDD=50V, RG=27Ω, Starting TJ =25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220 TO-220F θJA 62.5 °C/W TO-252 110 °C/W SOP-8 90 °C/W Junction to Case TO-220 θJC 1.01 °C/W TO-220F 3.2 °C/W TO-252 2.5 (Note) °C/W SOP-8 24 (Note) °C/W Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
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