UF634-HC

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R502-B85.D



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

250

V

Drain-Source Leakage Current

IDSS

VDS=250V

10

µA

Gate- Source Leakage Current

IGSS

VGS=±30V

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=4.0A

0.45

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

435

pF

Output Capacitance

COSS

72

pF

Reverse Transfer Capacitance

CRSS

5

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

VGS=10V, VDS=200V, ID=8.1A

(Note 1, 2)

10

nC

Gate to Source Charge

QGS

3

nC

Gate to Drain Charge

QGD

1.8

nC

Turn-ON Delay Time

tD(ON)

VDD=100V, ID=8.1A, RG=25Ω

(Note 1, 2)

7

ns

Rise Time

tR

17

ns

Turn-OFF Delay Time

tD(OFF)

26

ns

Fall-Time

tF

19

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

8.1

A

Pulsed-Source Current (Note 1)

ISM

32.4

A

Drain-Source Diode Forward Voltage

(Note 2)

VSD

IS=8.1A, VGS=0V, TJ=25°C

1.5

V

Reverse Recovery Time (Note 1)

trr

IS =6.0A, VGS=0V,

dIF/dt=100A/µs

115

ns

Reverse Recovery Charge

Qrr

1.05

µC

Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.

2. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤2%.

3. Essentially Independent of Operating Temperature.