Electrical ratings

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1

4/18

1.1

Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

3A

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

190

mJ

Table 4.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage Igs=± 1mA (Open Drain)

30

V