数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

STP4NK80Z 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP4NK80Z
功能描述  N-channel 800V - 3廓 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH??MOSFET
PDF  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP4NK80Z 数据表(HTML) 5 Page - STMicroelectronics

  STP4NK80Z Datasheet HTML 1Page - STMicroelectronics STP4NK80Z Datasheet HTML 2Page - STMicroelectronics STP4NK80Z Datasheet HTML 3Page - STMicroelectronics STP4NK80Z Datasheet HTML 4Page - STMicroelectronics STP4NK80Z Datasheet HTML 5Page - STMicroelectronics STP4NK80Z Datasheet HTML 6Page - STMicroelectronics STP4NK80Z Datasheet HTML 7Page - STMicroelectronics STP4NK80Z Datasheet HTML 8Page - STMicroelectronics STP4NK80Z Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 18 page
background image
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Electrical characteristics
5/18
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
800
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VGS = 0)
VGS = ± 20V
±
10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 50µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 1.5 A
3
3.5
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS =15V, ID = 1.5A
2.9
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
575
67
13
pF
pF
pF
Cosseq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
60
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=400 V, ID= 1.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
13
12
35
32
ns
ns
ns
ns
tr(Voff)
tr
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=640 V, ID= 3 A,
RG=4.7Ω, VGS=10V
(see Figure 16)
18
7.5
25
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=640V, ID = 3 A
VGS =10V
(see Figure 19)
22.5
4.2
11.3
nC
nC
nC



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com