2018/8/13

p.2

EMF60P02JS

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250µA

-20

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250µA

-0.3

-0.75

-1.2

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±12V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -16V, VGS = 0V

-1

µA

VDS = -16V, VGS = 0V, TJ = 125 °C

-10

On-State Drain Current1

ID(ON)

VDS = -5V, VGS = -4.5V

-4

A

Drain-Source On-State Resistance1

RDS(ON)

VGS = -4.5V, ID = -3.5A

53

65

mΩ

VGS = -2.5V, ID = -2.5A

75

96

VGS = -1.8V, ID = -1.0A

150

250

Forward Transconductance1

gfs

VDS = -5V, ID = -3.5A

10

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -10V, f = 1MHz

382

pF

Output Capacitance

Coss

70

Reverse Transfer Capacitance

Crss

60

Total Gate Charge1,2

Qg

VDS = -10V, VGS = -4.5V,

ID = -3.5A

7.2

nC

Gate-Source Charge1,2

Qgs

1.2

Gate-Drain Charge1,2

Qgd

2.3

Turn-On Delay Time1,2

td(on)

17

nS

Rise Time1,2

tr

VDS = -10V,

32

Turn-Off Delay Time1,2

td(off)

ID = -1A, VGS = -4.5V, RGS = 6Ω

37

Fall Time1,2

tf

32

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

IS

-3

A

Pulsed Current3

ISM

-12

Forward Voltage1

VSD

IF = IS, VGS = 0V

-1.2

V

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

EMC will review datasheet by quarter, and update new version.