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EMF60P02JS 数据表(PDF) 3 Page - Excelliance MOS Corp. |
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EMF60P02JS 数据表(HTML) 3 Page - Excelliance MOS Corp. |
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3 / 6 page ![]() 2018/8/13 p.3 EMF60P02JS -V - Drain-Source Voltage( V ) 0 0 4 1 DS 16 8 12 -3.0V -2.5V 2 3 4 -4.0V -3.5V V = -4.5 V GS Typical output characteristics 5 -1.8V T = 25°C - V - Gate-Source Voltage( V ) 0.04 0 0 0.02 0.06 2 GS 4 A 0.12 0.08 0.10 0.14 A T = 125°C 6 8 10 I = - 2A D On-Resistance Variation with Gate-Source Voltage Normalized on-Resistance v.s. Junction Temperature T - Junction Temperature (°C) 50 1.2 0.6 -50 0.8 1.0 J -25 0 25 D I = -3.5A V = -4.5V 1.4 1.6 1.8 GS 150 100 75 125 DS V = - 10V Q - Gate Charge( nC ) 0 0 1 2 g 2 4 I = - 3.5A 3 4 5 D 8 6 10 Gate Charge Characteristics - V , Drain-Source Voltage( V ) Capacitance Characteristics 300 0 0 100 200 Crss DS 5 Coss 400 500 600 10 15 20 Ciss Body Diode Forward Voltage Variation with Source Current and Temperature T = 125°C -V - Body Diode Forward Voltage( V ) 0.6 0.0001 0 0.001 0.01 SD 0.2 0.4 25°C V = 0V 0.1 1 10 GS A 0.8 1.0 -55°C 1.2 TYPICAL CHARACTERISTICS |
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