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ISTM4035 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISTM4035 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISTM4035 eq T6421M BI-DIRECTIONAL Thyristors www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive Peak Reverse Current VR=VRRM ,TJ=125℃ -- -- 10 mA IDRM Repetitive Peak Off-state Current VD=VDRM ,TJ=125℃ -- -- 10 mA VTM Forward voltage drop Ipk= 50A, TJ = 25℃ tp = 10ms sine pulse -- -- 1.71 V rT1 Low level value of forward slope resistance (16.7% x πx IF(AV)<I<πxIF(AV)), TJ=TJmax. -- -- 10.1 mΩ rT2 High level value of forward slope resistance (16.7% x πx IF(AV)<I<πxIF(AV)), TJ=TJmax. 5.7 mΩ IGT Gate-Trigger Current TJ=25℃ -- -- 60 mA VGT Gate-Trigger Voltage TJ=25℃ -- -- 2.0 V VGD Gate Non-trigger Voltage VDRM = rated value, TJ = TJ max -- -- 0.2 V IGD Gate Trigger Current VDRM = rated value, TJ = TJ max -- -- 2.0 mA IL Latching Current TJ = 25 °C, anode supply 12V resistive load -- -- 130 mA IH Holding Current TJ=25℃ -- -- 200 mA Rth j-c thermal resistance junction to case -- 0.75 -- ℃ /W MODULE M Mounting Screw -- 2.3 -- N.m Rth j-c thermal resistance junction to case -- 0.75 -- ℃ /W |
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