ISTM4035 datasheet(1/3 Pages) ISC

部件名	ISTM4035

功能描述	BI-DIRECTIONAL Thyristors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

ISTM4035

eq T6421M

BI-DIRECTIONAL Thyristors

www.iscsemi.com

1

FEATURES

· Improved glass passivation for high reliability

and exceptional stability at high temperature

· High di/dt and dv/dt capabilities

· Low thermal resistance

APPLICATIONS

· Medium power switching

· Phase control applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDRM

Repetitive Peak Off-state Voltage

600

V

VRRM

Repetitive Peak Reverse Voltage

600

V

IT(AV)

Max. average forward current

Tc= 85℃

180

° conduction, half sine wave

25

A

ITRMS

RMS forward current

40

A

ITSM

Non-repetitive Peak On-state Current

t = 10ms

No voltage

reapplied

420

A

t = 8.3ms

440

t = 10ms

100% VRRM

reapplied

350

t = 8.3ms

370

I2t

I2t Value for Fusing

t = 10ms

No voltage

reapplied

867

A2s*103

t = 8.3ms

790

t = 10ms

100% VRRM

reapplied

615

t = 10ms

No voltage

reapplied

560

di/dt

Max. rate of rise of turned-on current

200

A/us

dv/dt

Max. critical rate of rise of

100

V/us

VT(TO)1

Low level value of threshold voltage

(16.7%x

πx IF(AV)<I<πx IF(AV)), TJ=TJmax

0.99

V

VT(TO)2

High level value of threshold voltage

(I >

π x IF(AV)), TJ= TJmax

1.40

V

PGM

Maximum peak gate power

8

W

PG(AV)

Maximum average gate power

2.0

W

TJ

Virtual Junction Temperature

-65~125

℃

Tstg

Storage Temperature

-65~125

℃

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