IRF520VPBF datasheet(2/8 Pages) IRF

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IRF520VPbF

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.2

TJ = 25°C, IS = 9.2A, VGS = 0V

trr

Reverse Recovery Time

–––

120

TJ = 25°C, IF = 9.2A

Qrr

Reverse Recovery Charge

–––

220 330

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

9.6

Starting TJ = 25°C, L = 1.0mH

RG = 25Ω, IAS = 9.2A, VGS=10V (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

ISD ≤ 9.2A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Pulse width

≤ 400µs; duty cycle ≤ 2%.

This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to TJ = 175°C .

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.12 –––

V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

––– 0.165

Ω

VGS = 10V, ID = 5.5A

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

1.9

–––

VDS = 50V, ID = 5.5A

–––

µA

VDS = 100V, VGS = 0V

–––

250

VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

––– -100

VGS = -20V

Total Gate Charge

–––

ID = 9.2A

Qgs

Gate-to-Source Charge

–––

5.2

VDS = 80V

Qgd

Gate-to-Drain ("Miller") Charge

–––

7.0

VGS = 10V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

6.9

–––

VDD = 50V

Rise Time

–––

ID = 9.2A

td(off)

Turn-Off Delay Time

–––

RG = 18Ω

Fall Time

–––

VGS = 10V, See Fig. 10

Between lead,

–––

6mm (0.25in.)

from package

and center of die contact

Ciss

Input Capacitance

–––

560

–––

VGS = 0V

Coss

Output Capacitance

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

ƒ = 1.0MHz, See Fig. 5

EAS

Single Pulse Avalanche Energy

––– 150

IAS = 9.2A, L = 1.0mH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Internal Drain Inductance

Internal Source Inductance

–––

IGSS

4.5

7.5

IDSS

Drain-to-Source Leakage Current

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