IRF520VPBF datasheet(4/8 Pages) IRF

部件名	IRF520VPBF

功能描述	HEXFET짰 Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

4 / 8 page

IRF520VPbF

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Q , Total Gate Charge (nC)

FOR TEST CIRCUIT

SEE FIGURE

I =

9.2A

= 20V

= 50V

= 80V

0.1

100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

,Source-to-Drain Voltage (V)

= 0 V

T = 25 C

T = 175 C

100

VDS, Drain-to-Source Voltage (V)

200

400

600

800

1000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds+ Cgd

100

1000

VDS , Drain-toSource Voltage (V)

0.1

100

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

IRF520VPBF 数据表(PDF) 4 Page - International Rectifier

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