 2004 Microchip Technology Inc.

Preliminary

DS21233B-page 1

24C01B/02B

FEATURES

• Single supply with 5.0V operation

• Low power CMOS technology

- 1 mA active current typical

- 10 µA standby current typical at 5.0V

- 5 µA standby current typical at 5.0V

• Organized as a single block of 128 bytes (128 x 8)

or 256 bytes (256 x 8)

• 100 kHz compatibility

• Self-timed write cycle (including auto-erase)

• Page-write buffer for up to 8 bytes

• 2 ms typical write cycle time for page-write

• Hardware write protect for entire memory

• Can be operated as a serial ROM

• ESD protection > 3,000V

• 1,000,000 ERASE/WRITE cycles guaranteed

Data retention > 200 years

• 8 pin DIP or SOIC package

• Available for extended temperature ranges

DESCRIPTION

The Microchip Technology Inc. 24C01B and 24C02B

are 1K bit and 2K bit Electrically Erasable PROMs. The

devices are organized as a single block of 128 x 8 bit

or 256 x 8 bit memory with a 2-wire serial interface.

The 24C01B and 24C02B also have page-write capa-

bility for up to 8 bytes of data. The 24C01B and 24C02B

are available in the standard 8-pin DIP and an 8-pin

surface mount SOIC package.

These devices are for extended temperature

applications only. It is recommended that all other

applications use Microchip’s 24LC01B/02B.

PACKAGE TYPES

BLOCK DIAGRAM

- Automotive (E):

-40°C to

+125°C

1

2

3

4

8

7

6

5

NC

NC

NC

Vss

Vcc

WP

SCL

SDA

NC

NC

NC

Vss

1

2

3

4

8

7

6

5

Vcc

WP

SCL

SDA

PDIP

SOIC

HV GENERATOR

EEPROM

ARRAY

PAGE LATCHES

YDEC

XDEC

SENSE AMP

R/W CONTROL

MEMORY

CONTROL

LOGIC

I/O

CONTROL

LOGIC

WP

SDA SCL

Obsolete Device

Please use 24LC01B or 24LC02B.