NAND512R3A2C datasheet(1/51 Pages) STMICROELECTRONICS

部件名	NAND512R3A2C

功能描述	512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

PDF	51 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 51 page

February 2007

Rev 1

1/51

1

NAND512R3A2C NAND512R4A2C

NAND512W3A2C NAND512W4A2C

512 Mbit, 528 Byte/264 Word Page,

1.8V/3V, NAND Flash Memories

Features

●

High density NAND Flash memories

–

512 Mbit memory array

–

Cost effective solutions for mass

storage applications

●

NAND interface

–

x8 or x16 bus width

–

Multiplexed Address/ Data

●

Supply voltage: 1.8V, 3.0V

●

Page size

–

x8 device: (512 + 16 spare) Bytes

–

x16 device: (256 + 8 spare) Words

●

Block size

–

x8 device: (16K + 512 spare) Bytes

–

x16 device: (8K + 256 spare) Words

●

Page Read/Program

–

Random access:

12µs (3V)/15µs (1.8V) (max)

–

Sequential access:

30ns (3V)/50ns (1.8V) (min)

–

Page Program time: 200µs (typ)

●

Copy Back Program mode

●

Fast Block Erase: 2ms (Typ)

●

Status Register

●

Electronic Signature

●

Chip Enable ‘don’t care’

●

Serial Number option

●

Hardware Data Protection

–

Program/Erase locked during Power

transitions

●

Data integrity

–

100,000 Program/Erase cycles (with

ECC)

–

10 years Data Retention

●

ECOPACK® packages

●

Development tools

–

Error Correction Code models

–

Bad Blocks Management and Wear

Leveling algorithms

–

Hardware simulation models

FBGA

TSOP48 12 x 20mm

VFBGA55 8 x 10 x 1mm

VFBGA63 9 x 11 x 1mm

Table 1.

Device summary

Reference

Part Number

NAND512-A2C

NAND512R3A2C

NAND512R4A2C(1)

NAND512W3A2C

NAND512W4A2C(1)

1. x16 organization only available for MCP.

www.st.com

类似零件编号 - NAND512R3A2C

制造商	部件名	数据表	功能描述
Numonyx B.V	NAND512R3A2C	1Mb / 51P	512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Numonyx B.V	NAND512R3A2C	1Mb / 55P	512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
STMicroelectronics	NAND512R3A2CN1	916Kb / 57P	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 25-Feb-2005
	NAND512R3A2CN1E	916Kb / 57P	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 25-Feb-2005
	NAND512R3A2CN1F	916Kb / 57P	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 25-Feb-2005

More results

类似说明 - NAND512R3A2C

制造商	部件名	数据表	功能描述
STMicroelectronics	NAND128-A	916Kb / 57P	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 25-Feb-2005
	NAND01G-B	631Kb / 64P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 13-Feb-2006
	NAND04GW3B2B	501Kb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories 30-May-2006
	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 23-Nov-2006
	NAND256-M	228Kb / 23P	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 24-Aug-2006
Numonyx B.V	NAND01GW3A2B-KGD	1Mb / 48P	Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
	NAND04GW3B2B	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND512R3A2C	1Mb / 51P	512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
	NAND512R3A2SN6F	1Mb / 55P	512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
STMicroelectronics	NAND512-B	383Kb / 59P	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 25-Feb-2005

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NAND512R3A2C 数据表(PDF) 1 Page - STMicroelectronics

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类似说明 - NAND512R3A2C

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