TC429 datasheet(3/18 Pages) MICROCHIP

3 / 18 page

 2003 Microchip Technology Inc.

DS21416C-page 3

TC429

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage .....................................................+20V

Input Voltage, Any Terminal

................................... VDD + 0.3V to GND – 0.3V

Power Dissipation (TA ≤ 70°C)

PDIP ............................................................ 730 mW

CERDIP ....................................................... 800 mW

SOIC............................................................ 470 mW

Storage Temperature Range.............. -65°C to +150°C

Maximum Junction Temperature, TJ ............... +150°C

† Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

PIN FUNCTION TABLE

DC ELECTRICAL CHARACTERISTICS

Symbol

Description

VDD

Supply input, 7V to 18V

INPUT

Control input. TTL/CMOS compatible

logic input

No connection

GND

Ground

GND

Ground

OUTPUT

CMOS push-pull, common to pin 7

OUTPUT

CMOS push-pull, common to pin 6

VDD

Supply input, 7V to 18V

Electrical Specifications: Unless otherwise noted, TA = +25°C with 7V ≤ VDD ≤ 18V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input

Logic ‘1’, High Input Voltage

VIH

2.4

1.8

—

Logic ‘0’, Low Input Voltage

VIL

—1.3

0.8

Input Current

IIN

-10

—

µA

≤ VIN ≤ VDD

Output

High Output Voltage

VOH

VDD – 0.025

—

Low Output Voltage

VOL

——

0.025

Output Resistance

—1.8

2.5

Ω

VIN = 0.8V,

VOUT = 10 mA, VDD = 18V

—1.5

2.5

VIN = 2.4V,

VOUT = 10 mA, VDD = 18V

Peak Output Current

IPK

—6.0

—

VDD = 18V, Figure 4-4

Latch-Up Protection

Withstand Reverse Current

IREV

—

0.5

—

Duty cycle

≤ 2%, t ≤ 300 µsec,

VDD = 16V

Switching Time (Note 1)

Rise Time

—23

nsec CL = 2500 pF, Figure 4-1

Fall Time

—25

nsec CL = 2500 pF, Figure 4-1

Delay Time

tD1

—53

nsec Figure 4-1

Delay Time

tD2

—60

nsec Figure 4-1

Power Supply

Power Supply Current

—3.5

5.0

VIN = 3V

—0.3

0.5

VIN = 0V

Note 1: Switching times ensured by design.

TC429 数据表(PDF) 3 Page - Microchip Technology

TC429 数据表(HTML) 3 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

数据表下载