JT05N065RED-R-BR datasheet(3/12 Pages) JSMC

3 / 12 page

JT05N065RED/SED/FED/CED

版本：202309J

3/12

电特性 ELECTRICAL CHARACTERISTICS

项

目

Parameter

符号

Symbol

测试条件

Tests conditions

最小

Min

典型

Typ

最大

Max

单位

Units

关态特性 Off

–Characteristics

集电极－发射极击穿电压

Collector-Emitter Voltage

BVCES

IC=500μA, VGE=0V

650

击穿电压温度特性

Breakdown Voltage Temperature

Coefficient

ΔBVCES/ΔTJ IC=1mA, referenced to 25℃

0.5

℃

零栅压下集电极漏电流

Zero Gate Voltage Collector Current

ICES

VCE=650V,

VGE=0V, TC=25℃

μA

正向栅极体漏电流

Gate-body leakage current, forward

IGESF

VCE=0V,

VGE =20V

200

反向栅极体漏电流

Gate-body leakage current, reverse

IGESR

VCE=0V,

VGE =-20V

-200

通态特性 On-Characteristics

阈值电压

Gate Threshold Voltage

VGE(th)

VCE = VGE ,

IC=250μA

4.5

6.5

饱和压降

Collector-Emitter saturation Voltage

VCESAT

VGE=15V

IC=5A

Tc=25℃

1.5

1.8

VGE=15V

IC=6A

Tc=25℃

1.6

1.9

动态特性 Dynamic Characteristics

输入电容 Input capacitance

Cies

VCE=25V,

VGE=0V,

f=1.0MHZ

259

输出电容 Output capacitance

Coes

31.3

反向传输电容

Reverse transfer capacitance

Cres

10.3

栅极电荷总量-Total Gate Charge

VCC=480V,Ic=5A, VGE=15 V

TC=25℃（note 2）

13.7

栅极-发射极电荷

Gate to emitter charge

Qge

2.3

栅极-集电极电荷

Gate to collector charge

Qgc

5.8

栅极电荷总量-Total Gate Charge

VCC=480V,Ic=6A, VGE=15 V

TC=25℃（note 2）

16.8

栅极-发射极电荷

Gate to emitter charge

Qge

6.3

栅极-集电极电荷

Gate to collector charge

Qgc

2.8

栅极电阻-Gate resistance

f=1 MHz, open collector

2.0 -

短路电流-Short current

Isc

VGE=15V VCE=360V

TJstart≤150℃ tsc≤10µs

JT05N065RED-R-BR 数据表(PDF) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

JT05N065RED-R-BR 数据表(HTML) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载