ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

1

8

A

TC = 70 °C

1

4

Pulsed Drain Current (t = 300 µs)

IDM

25

Avalanche Current

IAS

15

Single Avalanche Energya

L = 0.1 mH

EAS

11.25

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

41.7b

W

TA = 25 °C

c

2.1

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)c

RthJA

60

°C/W

Junction-to-Case (Drain)

RthJC

3

N-channel Enhancement Mode Power MOSFET

Features

 VDS=

60V, ID= 50A

RDS(ON) <

73mΩ @ VGS = 10V

RDS(ON) <

85 mΩ @ VGS =4.5V

●

Advanced Trench Technology

●

Provide Excellent RDS(ON) and Low Gate

Charge

●

Lead Free and Green Available

100% UIS TESTED!

100% ΔVds TESTED!

General Features

Pin Assignment

TO-252-2L Top View

Schematic Diagram

www.bychip.cn

LR024N

v1.0