M41ST85W datasheet(25/34 Pages) STMICROELECTRONICS

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M41ST85W

Table 11. DC Characteristics

Note: 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 2.7 to 3.6V (except where noted).

2. Measured with VOUT and ECON open.

3. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ resistor.

4. Outputs Deselected.

5. External SRAM must match RTC SUPERVISOR chip VCC specification.

6. For PFO and SQW pins (CMOS).

7. Conditioned output (ECON) can only sustain CMOS leakage current in the battery back-up mode. Higher leakage currents will re-

duce battery life.

8. For IRQ/FT/OUT, RST pins (Open Drain): if pulled-up to supply other than VCC, this supply must be equal to, or less than 3.0V when

VCC = 0V (during battery back-up mode).

9. For rechargeable back-up, VBAT (max) may be considered VCC.

Sym

Parameter

Test Condition(1)

M41ST85W

Unit

Min

Typ

Max

IBAT

(2)

Battery Current OSC ON

TA = 25°C, VCC = 0V, VBAT = 3V

400

500

Battery Current OSC OFF

ICC1

Supply Current

f = 400kHz

0.75

ICC2

Supply Current (Standby)

SCL, SDA = VCC – 0.3V

or VSS + 0.3V

0.50

ILI

(3)

Input Leakage Current

≤ VIN ≤ VCC

±1

µA

Input Leakage Current (PFI)

–25

ILO

(4)

Output Leakage Current

≤ VIN ≤ VCC

±1

µA

IOUT1

(5)

VOUT Current (Active)

VOUT1 > VCC – 0.3V

100

IOUT2

VOUT Current (Battery Back-up)

VOUT2 > VBAT – 0.3V

100

µA

VIH

Input High Voltage

0.7VCC

VCC + 0.3

VIL

Input Low Voltage

–0.3

0.3VCC

VBAT

Battery Voltage

2.5

3.0

3.5(9)

VOH

Output High Voltage(6)

IOH = –1.0mA

2.4

Pull-up Supply Voltage (Open Drain)

RST, IRQ/FT/OUT

3.6

VOHB

(7)

VOH (Battery Back-up)

IOUT2 = –1.0µA

2.5

2.9

3.5

VOL

Output Low Voltage

IOL = 3.0mA

0.4

Output Low Voltage (Open Drain)(8)

IOL = 10mA

0.4

VPFD

Power Fail Deselect

2.55

2.60

2.70

VPFI

PFI Input Threshold

VCC = 3V(W)

1.225

1.250

1.275

PFI Hysteresis

PFI Rising

VSO

Battery Back-up Switchover

2.5

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