PIC16F505-ESLASHMS datasheet(71/100 Pages) MICROCHIP

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Preliminary

DS41236C-page 69

PIC12F508/509/16F505

10.1

DC Characteristics: PIC12F508/509/16F505 (Industrial)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise specified)

Operating Temperature -40

°C ≤ TA ≤ +85°C (industrial)

Param

No.

Sym

Characteristic

Min

Typ(1)

Max

Units

Conditions

D001

VDD

Supply Voltage

2.0

5.5

See Figure 10-1

D002

VDR

RAM Data Retention Voltage(2)

—

1.5*

—

Device in Sleep mode

D003

VPOR

VDD Start Voltage to ensure

Power-on Reset

—VSS

—V

See Section 7.4 "DC Characteris-

tics" for details

D004

SVDD

VDD Rise Rate to ensure

Power-on Reset

0.05

—

V/ms

See Section 7.4 "DC Characteris-

tics" for details

D010

IDD

Supply Current(3)

—

170

0.4

1.7

TBD

μA

FOSC = 4 MHz, VDD = 2.0V(4)

FOSC = 10 MHz, VDD = 3.0V

FOSC = 20 MHz, VDD = 5.0V

FOSC = 32 kHz, VDD = 2.0V, WDT

disabled

D020

IPD

Power-down Current(5)

—0.1

TBD

μAVDD = 2.0V

D022

ΔIWDT WDT Current(5)

—1.0

TBD

μAVDD = 2.0V

Legend: TBD = To Be Determined.

These parameters are characterized but not tested.

Note 1:

Data in the Typical (“Typ”) column is based on characterization results at 25

°C. This data is for design

guidance only and is not tested.

This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.

The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus

loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on

the current consumption.

a) The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VSS, T0CKI = VDD,

MCLR = VDD; WDT enabled/disabled as specified.

b) For standby current measurements, the conditions are the same, except that the device is in Sleep

mode.

Does not include current through REXT (in EXTRC mode only). The current through the resistor can be

estimated by the formula:

I = VDD/2REXT (mA) with REXT in k

Ω.

The Power-down current in Sleep mode does not depend on the oscillator type. Power-down current is

measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD or VSS.

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