PIC16F506T-ESLASHSLSQTP datasheet(85/116 Pages) MICROCHIP

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Preliminary

DS41268C-page 83

PIC12F510/16F506

13.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Ambient temperature under bias.......................................................................................................... -40°C to +125°C

Storage temperature ............................................................................................................................ -65°C to +150°C

Voltage on VDD with respect to VSS ............................................................................................................... 0 to +7.0V

Voltage on MCLR with respect to VSS............................................................................................................. 0 to +14V

Voltage on all other pins with respect to VSS ............................................................................... -0.3V to (VDD + 0.3V)

Total power dissipation(1) .................................................................................................................................. 700 mW

Max. current out of VSS pin ................................................................................................................................ 200 mA

Max. current into VDD pin ................................................................................................................................... 150 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

...................................................................................................................±20 mA

Output clamp current, IOK (VO < 0 or VO > VDD)

...........................................................................................................±20 mA

Max. output current sunk by any I/O pin .............................................................................................................. 25 mA

Max. output current sourced by any I/O pin ......................................................................................................... 25 mA

Max. output current sourced by I/O port ............................................................................................................ 100 mA

Max. output current sunk by I/O port ................................................................................................................. 100 mA

Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOL x IOL)

†NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above

those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

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