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UT3401-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT3401-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT3401-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT3401-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT3401-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT3401-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT3401-AE3-R Datasheet HTML 4Page - Unisonic Technologies UT3401-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
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UT3401
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-109,A
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
Ta =25°C
-4.2
A
Continuous Drain Current (Note 1)
Ta =70°C
ID
-3.5
A
Pulsed Drain Current (Note 2)
IDM
-30
A
Power Dissipation (Note 1)
PD
1.4
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
65
90
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±12V
±
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
-0.7
-1
-1.3
V
VGS=-10V, ID=-4.2A
42
50
mΩ
VGS=-4.5V, ID=-4A
53
65
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS=-2.5V, ID=-1A
80
120
mΩ
Forward Transconductance
gFS
VDS=-5V, ID=-5A
7
11
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
954
pF
Output Capacitance
COSS
115
pF
Reverse Transfer Capacitance
CRSS
VGS =0V, VDS =-15V, f=1MHz
77
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
6.3
ns
Turn-ON Rise Time
tR
3.2
ns
Turn-OFF Delay Time
tD(OFF)
38.2
ns
Turn-OFF Fall-Time
tF
VGS=-10V, VDS=-15V
RL=3.6Ω, RG =6Ω
12
ns
Total Gate Charge
QG
9.4
nC
Gate-Source Charge
QGS
2
nC
Gate-Drain Charge
QGD
VGS=-4.5V, VDS=-15V, ID=-4A
3
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VDS=0V, IS=-1A
-0.75
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-2.2
A
Reverse Recovery Time
tRR
20.2
ns
Reverse Recovery Charge
QRR
IF=-4A, dI/dt=100A/µs
11.2
nC
Note: 1. The value of θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user ' s specific board
design. The current rating is based on the t ≤ 10s thermal resistance rating.
2. Repetitive Rating: Pulse width limited by TJ



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