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UT3401-AE3-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UT3401-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT3401-AE3-R 数据表(HTML) 4 Page - Unisonic Technologies

  UT3401-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT3401-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT3401-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT3401-AE3-R Datasheet HTML 4Page - Unisonic Technologies UT3401-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
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UT3401
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R502-109,A
TYPICAL CHARACTERISTICS(Cont.)
0
4
1
Total Gate Charge, Qg (nC)
Gate-Charge Characteristics
12
4
26
8
0
2
5
0
Drain-Source Voltage, -VDS (V)
Capacitance Characteristics
30
515
25
0
20
10
3
200
400
600
800
1000
1200
1400
VDS=-15V
ID=-4A
10
CISS
COSS
CRSS
0.1
1.0
Drain-Source Voltage, -VDS (V)
Maximum Forward Biased Safe
Operating Area (Note 4)
100
1
0.1
100.0
0.001
Pulse Width (s)
Single Pulse Power Rating
Junction-to-Ambient (Note 4)
1000
0.1
1
10
0
10
30
40
10
10.0
1s
100
0.01
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10s
DC
0.1s 10ms
1ms
100µs
10µs
20
TJ(MAX)=150°C
TA=25°C
0.00001
Pulse Width (s)
Normalized Maximum Transient Thermal
Impedance
0.1
0.0001
0.01
10
0.1
0.001
1
10
100
1000
1
0.01
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01,
single pulse
PD
T
Ton
Note:
3. The static characteristics obtained using80µs
pulses, duty cycle 0.5% max.
4. The measurementsare performed with the
device mounted on1in
2 FR-4 board with 2oz.
Copper, in a still air environment with TA=25°C.
The SOA curve provides a single pulse rating.



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