OP196/OP296/OP496–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

OP196G, OP296G, OP496G

35

300

µV

–40

°C ≤ TA ≤ +125°C

650

µV

OP296H, OP496H

800

µV

–40

°C ≤ TA ≤ +125°C

1.2

mV

Input Bias Current

IB

–40

°C ≤ TA ≤ +125°C

±10

±50

nA

Input Offset Current

IOS

±1.5

±8nA

–40

°C ≤ TA ≤ +125°C

±20

nA

Input Voltage Range

VCM

05.0

V

Common-Mode Rejection Ratio

CMRR

0 V

≤ VCM ≤ 5.0 V,

–40

°C ≤ T

A

≤ +125°C65

dB

Large Signal Voltage Gain

AVO

RL = 100 k

Ω,

0.30 V

≤ VOUT ≤ 4.7 V,

–40

°C ≤ T

A

≤ +125°C

150

200

V/mV

Long-Term Offset Voltage

VOS

G Grade, Note 1

550

µV

H Grade, Note 1

1

mV

Offset Voltage Drift

∆V

OS/

∆T

G Grade, Note 2

1.5

µV/°C

H Grade, Note 2

2

µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High

VOH

IL = 100

µA

4.85

4.92

V

IL = 1 mA

4.30

4.56

V

IL = 2 mA

4.1

V

Output Voltage Swing Low

VOL

IL = –

36

70

mV

IL = –1 mA

350

550

mV

IL = –2 mA

750

mV

Output Current

IOUT

±4mA

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

±2.5 V ≤ VS ≤ ±6 V,

–40

°C ≤ T

A

≤ +125°C85

dB

Supply Current per Amplifier

ISY

VOUT = 2.5 V, RL =

∞

60

µA

–40

°C ≤ TA ≤ +125°C45

80

µA

DYNAMIC PERFORMANCE

Slew Rate

SR

RL = 100 k

Ω

0.3

V/

µs

Gain Bandwidth Product

GBP

350

kHz

Phase Margin

øm

47

Degrees

NOISE PERFORMANCE

Voltage Noise

en p-p

0.1 Hz to 10 Hz

0.8

µV p-p

Voltage Noise Density

en

f = 1 kHz

26

nV/

√Hz

Current Noise Density

in

f = 1 kHz

0.19

pA/

√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5

°C, with an LTPD of 1.3.

2Offset voltage drift is the average of the –40

°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

–2–

(@ VS = 5.0 V, VCM = 2.5 V, TA = 25 C, unless otherwise noted.)

REV.

+

E

100 μA