ELECTRICAL SPECIFICATIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

OP196G, OP296G, OP496G

35

300

µV

0

°C ≤ T

A

≤ 125°C

650

µV

OP296H, OP496H

800

µV

0

°C ≤ TA ≤ 125°C

1.2

mV

Input Bias Current

IB

±10

±50

nA

Input Offset Current

IOS

±1

±8nA

Input Voltage Range

VCM

0

3.0

V

Common-Mode Rejection Ratio

CMRR

0 V

≤ VCM ≤ 3.0 V,

0

°C ≤ T

A

≤ 125°C60

dB

Large Signal Voltage Gain

AVO

RL = 100 k

Ω

80

200

V/mV

Long-Term Offset Voltage

VOS

G Grade, Note 1

550

µV

H Grade, Note 1

1

mV

Offset Voltage Drift

∆VOS/∆T

G Grade, Note 2

1.5

µV/°C

H Grade, Note 2

2

µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High

VOH

IL = 100

µA

2.85

V

Output Voltage Swing Low

VOL

IL = –100

µA70

mV

POWER SUPPLY

Supply Current per Amplifier

ISY

VOUT = 1.5 V, RL =

∞

40

60

µA

0

°C ≤ TA ≤ 125°C80

µA

DYNAMIC PERFORMANCE

Slew Rate

SR

RL = 100 k

Ω

0.25

V/

µs

Gain Bandwidth Product

GBP

350

kHz

Phase Margin

øm

45

Degrees

NOISE PERFORMANCE

Voltage Noise

en p-p

0.1 Hz to 10 Hz

0.8

µV p-p

Voltage Noise Density

en

f = 1 kHz

26

nV/

√Hz

Current Noise Density

in

f = 1 kHz

0.19

pA/

√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5

°C, with an LTPD of 1.3.

2Offset voltage drift is the average of the 0

°C to 25°C delta and the 25°C to 125°C delta.

Specifications subject to change without notice.

OP196/OP296/OP496

REV.

–3–

(@ VS = 3.0 V, VCM = 1.5 V, TA = 25 C, unless otherwise noted.)

f

1

4

E