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BYPASSING THE BOOST CONVERTER

Toko

1098AS-4R7M

ToshibaCRS06

SchottkyDiode

V

DD

SW

IN–

IN+

AGND

PGND

VOUT+

VOUT–

V

OUT

CC

V

IN

CC

22 F

m

22 F

m

1 F

m

ToBattery

Left

Channel

Input

C

IN

C

IN

V

FB

CC

SDb

SDd

GAIN

4.7 H

m

GND=Bypass

V

=BoostMode

DD

1 F

m

R1

50k

R2

500k

TPA2013D1

GPIO

EFFICIENCY AND THERMAL INFORMATION

JA

1

1

=

=

= 80.64 C/W

Derating Factor

0.0124

q

°

(8)

TPA2013D1

SLOS520 – AUGUST 2007

Bypass the boost converter to drive the Class-D amplifier directly from the battery. Place a Shottky diode

reverse breakdown voltage of 10 V or greater, and a forward voltage as small as possible. See Figure 34 for an

example of a circuit designed to bypass the boost converter.

enabled (SDb

the recommended operating range when the boost converter is disabled (SDb

≤ 0.3V).

Place a logic high on SDb to place the TPA2013D1 in boost mode. Place a logic low on SDb to place the

TPA2013D1 in bypass mode.

Figure 34. Bypass Circuit

The maximum ambient temperature depends on the heat-sinking ability of the PCB system. The derating factors

for the YZH and RGP packages are shown in the dissipation rating table. Apply the same principles to both

packages. Using the YZH package, and converting this to

Given

following equation:

20

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