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P4C1023L-55CWC 数据表(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C1023L-55CWC 数据表(HTML) 3 Page - Pyramid Semiconductor Corporation |
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3 / 11 page ![]() P4C1023/P4C1023L Page 3 of 11 Document # SRAM126 REV OR Note 1 - Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously enabled for writing, i.e., CE 2 ≥ VIH (min), CE1 and WE ≤ VIL (max), OE is high. Switching inputs are 0V and 3V. CAPACITANCES(4) (V CC = 5.0V, TA = 25°C, f = 1.0 MHz) POWER DISSIPATION CHARACTERISTICS VS. SPEED AC ELECTRICAL CHARACTERISTICS - READ CYCLE (Over Recommended Operating Temperature & Supply Voltage) Symbol Parameter Test Conditions Max Unit C IN C OUT Input Capacitance Output Capacitance V IN = 0V V OUT = 0V 7 9 pF pF Symbol Parameter Unit Dynamic Operating Current Commercial Industrial Military 20 25 35 20 25 35 mA -55 -70 Temperature Range Symbol Parameter -55 Min Max -70 Min Max Unit t RC 55 ns t AA Address Access Time 55 70 ns t AC Chip Enable Access Time 55 70 ns t OH Output Hold from Address Change 55 ns t LZ Chip Enable to Output in Low Z 10 10 ns t HZ Chip Disable to Output in High Z 20 25 ns t OE Output Enable Low to Data Valid 30 35 ns t OLZ Output Enable Low to Low Z 55 ns t OHZ Output Enable High to High Z 20 25 ns t PU Chip Enable to Power Up Time 00 ns t PD Chip Disable to Power Down Time 55 70 ns Read Cycle Time 70 Note 1 I CC |
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