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TIC206N 数据表(PDF) 1 Page - Power Innovations Ltd |
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TIC206N 数据表(HTML) 1 Page - Power Innovations Ltd |
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1 / 5 page  TIC206 SERIES SILICON TRIACS PRODUCT INFORMATION 1 DECEMBER 1971 - REVISED MARCH 1997 Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. q Sensitive Gate Triacs q 4 A RMS q Glass Passivated Wafer q 400 V to 800 V Off-State Voltage q Max IGT of 5 mA (Quadrants 1 - 3) MT1 MT2 G TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 160 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TIC206D TIC206M TIC206S TIC206N VDRM 400 600 700 800 V Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 4 A Peak on-state surge current full-sine-wave (see Note 3) ITSM 25 A Peak on-state surge current half-sine-wave (see Note 4) ITSM 30 A Peak gate current IGM ±0.2 A Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) PGM 1.3 W Average gate power dissipation at (or below) 85°C case temperature (see Note 5) PG(AV) 0.3 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C Lead temperature 1.6 mm from case for 10 seconds TL 230 °C electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current VD = rated VDRM IG = 0 TC = 110°C ±1 mA IGTM Peak gate trigger current Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs 0.5 -1.5 -2 3.6 5 -5 -5 10 mA VGTM Peak gate trigger voltage Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs 0.7 -0.7 -0.8 0.8 2 -2 -2 2 V † All voltages are with respect to Main Terminal 1. |
类似零件编号 - TIC206N |
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类似说明 - TIC206N |
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