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TIC206N 数据表(PDF) 2 Page - Power Innovations Ltd |
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TIC206N 数据表(HTML) 2 Page - Power Innovations Ltd |
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2 / 5 page ![]() TIC206 SERIES SILICON TRIACS 2 DECEMBER 1971 - REVISED MARCH 1997 PRODUCT INFORMATION † All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz. VTM Peak on-state voltage ITM = ±4.2 A IG = 50 mA (see Note 6) ±1.3 ±2.2 V IH Holding current Vsupply = +12 V† Vsupply = -12 V† IG = 0 IG = 0 Init’ ITM = 100 mA Init’ ITM = -100 mA 2 -4 15 -15 mA IL Latching current Vsupply = +12 V† Vsupply = -12 V† (see Note 7) 30 -30 mA dv/dt Critical rate of rise of off-state voltage VDRM = Rated VDRM IG = 0 TC = 110°C ±50 V/µs dv/dt(c) Critical rise of commutation voltage VDRM = Rated VDRM ITRM = ±4.2 A TC = 85°C ±1 ±1.3 ±2.5 V/µs thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 7.8 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TYPICAL CHARACTERISTICS Figure 1. Figure 2. GATE TRIGGER CURRENT T C - Case Temperature - °C -60 -40 -20 0 20 40 60 80 100 120 0·1 1 10 100 1000 TC05AA TEMPERATURE vs V supply IGTM + + + - - - - + V AA = ± 12 V R L = 10 Ω Ω t w(g) = 20 µs GATE TRIGGER VOLTAGE T C - Case Temperature - °C -60 -40 -20 0 20 40 60 80 100 120 0·1 1 10 TC05AB TEMPERATURE vs V supply IGTM + + + - - - - + } } V AA = ± 12 V R L = 10 Ω Ω t w(g) = 20 µs |
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