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STP4N150 数据表(PDF) 1 Page - STMicroelectronics |
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STP4N150 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() August 2006 Rev 4 1/14 14 STP4N150 STW4N150 N-channel 1500V - 5 Ω - 4A - TO-220/TO-247 Very high PowerMESH™ Power MOSFET General features ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Applications ■ Switching application Internal schematic diagram Type VDSS (@Tjmax) RDS(on) ID STP4N150 1500 V < 7 Ω 4A STW4N150 1500 V < 7 Ω 4A TO-220 TO-247 1 2 3 www.st.com Order codes Part number Marking Package Packaging STP4N150 P4N150 TO-220 Tube STW4N150 W4N150 TO-247 Tube |
类似零件编号 - STP4N150 |
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类似说明 - STP4N150 |
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