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STP4N150 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP4N150
功能描述  N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP4N150 数据表(HTML) 3 Page - STMicroelectronics

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STP4N150 - STW4N150
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
1500
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)
1500
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
4A
ID
Drain current (continuous) at TC = 100°C
2.5
A
IDM (1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
12
A
PTOT
Total dissipation at TC = 25°C
160
W
Derating factor
1
W/°C
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-247
Rthj-case
Thermal resistance junction-case max
0.78
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
50
°C/W
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
4A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
350
mJ



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