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HS3KB 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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HS3KB 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 2 page ![]() FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10W NONINDUCTIVE -1.0A -0.25A 0 +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm RATINGS AND CHARACTERISTIC CURVES (HS3AB THRU HS3MB) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 1 10 100 1000 0 100 300 200 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 0.1 0.5 15 2 10 20 50 100 200 500 1000 25 50 75 100 125 150 175 REVERSE VOLTAGE. (V) HS3AB-HS3GB HS3JB-HS3MB 0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 20 40 60 80 100 120 0.1 1 10 100 1000 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=25 C 0 Tj=125 C 0 0 140 Version: A06 FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 0 25 50 100 150 175 125 75 0 0.5 1.5 2.0 3.0 2.5 1.0 AMBIENT TEMPERATURE. ( C) O FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 10 1 0.1 0.01 FORWARD VOLTAGE. (V) 0 1.6 1.8 HS3 GB HS3JB-HS3MB |
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