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HS3KB 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 HS3KB
功能描述  3.0 AMPS. High Efficient Surface Mount Rectifiers
PDF  2 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

HS3KB 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  HS3KB Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd HS3KB Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
Version: A06
HS3AB - HS3MB
3.0 AMPS. High Efficient Surface Mount Rectifiers
SMB/DO-214AA
.083(2.10)
.077(1.95)
.012(.31)
.006(.15)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.103(2.61)
.078(1.99)
.209(5.30)
.201(5.10)
Features
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency
High temperature soldering:
260oC/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V0
Mechanical Data
Cases: Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packing: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HS
3AB
HS
3BB
HS
3DB
HS
3FB
HS
3GB
HS
3JB
HS
3KB
HS
3MB
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800 1000
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800 1000
V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
3.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
150
A
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
1.0
1.3
1.7
V
Maximum DC Reverse Current @ TA =25
oC
at Rated DC Blocking Voltage @ TA=125
oC
IR
10
250
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
75
nS
Typical Junction Capacitance ( Note 2 )
Cj
80
50
pF
Operating Temperature Range
TJ
-55 to +150
oC
Storage Temperature Range
TSTG
-55 to +150
oC
Notes:
1. Reverse Recovery Test Conditions: I
F=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied V
R=4.0 Volts.
3. Measured on P.C.Board with 0.6” x 0.6” (16mm x 16mm) Copper Pad Area.


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