STT49
Thyristor-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
V
VT, VF
IT, IF=200A; TVJ=25
oC
1.75
VTO
For power-loss calculations only (TVJ=125
oC)
0.85
V
rT
5.3
m
VD=6V;
TVJ=25
oC
TVJ=-40
oC
VGT
1.5
1.6
V
VD=6V;
TVJ=25
oC
TVJ=-40
oC
IGT
100
200
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.2
V
IGD
10
mA
IH
TVJ=25
oC; VD=6V; RGK=
200
mA
TVJ=25
oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
450
mA
IL
per thyristor/diode; DC current
per module
RthJC
0.53
0.265
K/W
per thyristor/diode; DC current
per module
RthJK
0.73
0.365
K/W
dS
Creeping distance on surface
12.7
mm
dA
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
5
mA
TVJ=25
oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tgd
2
us
TVJ=TVJM; IT=120A; tp=200us; -di/dt=10A/us
typ.
VR=100V; dv/dt=20V/us; VD=2/3VDRM
tq
150
us
uC
QS
TVJ=TVJM; IT, IF=50A; -di/dt=0.64A/us
90
IRM
11
A
FEATURES
* International standard package
* Planar passivated chips
* Isolation voltage 3600 V~
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
* Copper base plate
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