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STT49
Thyristor-Thyristor Modules
Fig. 1 Surge overload current
I
TSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
100
101
102
103
104
0.1
1
10
I
G
V
G
mA
1: I
GT, TVJ = 125 C
2: I
GT, TVJ =
25 C
3: I
GT, TVJ = -40 C
V
4: P
GAV = 0.5 W
5: P
GM =
5 W
6: P
GM = 10 W
I
GD, TVJ = 125 C
3
4
2
1
5
6
Fig. 3
Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
10
100
1000
1
10
100
1000
mA
I
G
s
t
gd
Limit
typ.
T
VJ = 25 C
Fig. 6 Gate trigger delay time
3 x STT49
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