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ISC052N03LF2S 数据表(PDF) 9 Page - Infineon Technologies AG |
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ISC052N03LF2S 数据表(HTML) 9 Page - Infineon Technologies AG |
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9 / 14 page ![]() StrongIRFET™ 2 Power‑Transistor, 30 V ISC052N03LF2S Public Datasheet 9 Revision 1.1 https://www.infineon.com 2024‑11‑25 Diagram 9: Normalized drain‑source on resistance Diagram 10: Typ. gate threshold voltage R =f( ), =20 A, =10 V T I V V =f( ), = ; parameter: T V V I Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode C=f( ); =0 V; =1 MHz V V f I =f( ); parameter: V T DS(on) j D GS GS(th j GS DS D DS GS F SD j 75 50 25 0 25 50 75 100 125 150 175 200 Tj [°C] 0.4 0.8 1.2 1.6 2.0 75 50 25 0 25 50 75 100 125 150 175 200 Tj [°C] 0.0 0.4 0.8 1.2 1.6 2.0 2.4 30 µA 300 µA 0 5 10 15 20 25 30 VDS [V] 101 102 103 104 Ciss Coss Crss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD [V] 100 101 102 103 25 °C 175 °C |
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