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ISC052N03LF2S 数据表(PDF) 1 Page - Infineon Technologies AG |
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ISC052N03LF2S 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 14 page ![]() Pin 1 2 3 4 4 3 2 1 5 6 7 8 5 6 7 8 Datasheet 1 Revision 1.1 https://www.infineon.com 2024‑11‑25 MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features Product validation Qualified according to JEDEC Standard Table 1 Key performance parameters Parameter Value Unit V 30 V R 5.2 mΩ I 74 A Q 12 nC Q (0V..4.5V) 7.4 nC PG‑TDSON‑8 Type / Ordering code Package Marking Related links ISC052N03LF2S PG‑TDSON‑8 052N03F2 ‑ Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • DS DS(on),max D oss g Public ISC052N03LF2S Final datasheet Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 *1 *1: Internal body diode |
类似零件编号 - ISC052N03LF2S |
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类似说明 - ISC052N03LF2S |
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