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LP5527TL 数据表(PDF) 19 Page - National Semiconductor (TI) |
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LP5527TL 数据表(HTML) 19 Page - National Semiconductor (TI) |
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19 / 21 page ![]() Recommended External Components OUTPUT CAPACITOR, C OUT1,COUT2 The output capacitors C OUT1,COUT2 directly affect the mag- nitude of the output ripple voltage. In general, the higher the value of C OUT, the lower the output ripple magnitude. Multi- layer ceramic capacitors with low ESR are the best choice. At the lighter loads, the low ESR ceramics offer a much lower V OUT ripple that the higher ESR tantalums of the same value. At the higher loads, the ceramics offer a slightly lower V OUT ripple magnitude than the tantalums of the same value. However, the dv/dt of the V OUT ripple with the ceramics is much lower that the tantalums under all load conditions. Capacitor voltage rating must be sufficient, 10V is recom- mended Some ceramic capacitors, especially those in small packages, exhibit a strong capacitance reduction with the increased applied voltage. The capacitance value can fall to below half of the nominal capacitance. Too low output capacitance can make the boost converter unstable. INPUT CAPACITOR, C IN The input capacitor C IN directly affects the magnitude of the input ripple voltage and to a lesser degree the V OUT ripple. A higher value C IN will give a lower VIN ripple. Capacitor volt- age rating must be sufficient, 10V or greater is recom- mended. OUTPUT DIODE, D 1 The output diode for a boost converter must be chosen correctly depending on the output voltage and the output current. The diode must be rated for a reverse voltage greater than the output voltage used. The average current rating must be greater than the maximum load current ex- pected, and the peak current rating must be greater than the peak inductor current (~1.6A at maximum load). A Schottky diode should be used for the output diode. Schottky diodes with a low forward voltage drop (V F) and fast switching speeds are ideal for increasing efficiency in portable appli- cations. Do not use ordinary rectifier diodes, since slow switching speeds and long recovery times cause the effi- ciency and the load regulation to suffer. In Schottky barrier diodes reverse leakage current increases quickly with the junction temperature. Therefore, reverse power dissipation and the possibility of thermal runaway has to be considered when operating under high temperature conditions. Ex- amples of suitable diodes are Diodes Incorporated type DFLS220L, ON Semiconductor type MBRA210LT3 and Phil- ips type PMEG1020. INDUCTOR, L 1 The LP5527 high switching frequency enables the use of the small surface mount inductor. A 4.7 µH shielded inductor is suggested for 2 MHz switching frequency. The inductor should have a saturation current rating higher than the peak current it will experience during circuit operation (~1.7A at maximum load). Less than 300 m Ω ESR is suggested for high efficiency. Open core inductors cause flux linkage with circuit components and interfere with the normal operation of the circuit. This should be avoided. For high efficiency, choose an inductor with a high frequency core material such as ferrite to reduce the core losses. To minimize radiated noise, use a toroid, pot core or shielded core inductor. The inductor should be connected to the SW1 and SW2 pins as close to the I C as possible. Example of a suitable inductor is TDK type VLCF5020T-4R7N1R7-1. Table List of Recommended External Components Symbol Symbol Explanation Value Unit Type C VDD1 V DD1 Bypass Capacitor 100 nF Ceramic, X5R C VDD2 V DD2 Bypass Capacitor 100 nF Ceramic, X5R C OUT1,2 Output Capacitors from FB to GND 2 x 10 µF ± 10% µF Ceramic, X5R, 10V C IN Input Capacitor from Battery Voltage to GND 10 ± 10% µF Ceramic, X5R, 10V C VDDIO V DD_IO Bypass Capacitor 100 nF Ceramic, X5R C VDDA V DDA Bypass Capacitor 4.7 µF Ceramic, X5R, 6.3V C 1,2 Audio Input Capacitors 47 nF Ceramic, X5R RT Oscillator Frequency Bias Resistor 82 k Ω 1% RF Flash Current Set Resistor for 400 mA Sink Current 1200 Ω 1% C VREF Reference Voltage Capacitor, between V REF and GND 100 nF Ceramic, X5R L 1 Boost Converter Inductor 4.7 µH Shielded, low ESR, I SAT ~1.7A D 1 Rectifying Diode, V F @ maxload 0.35 V Schottky diode Flash LED User defined LED1 to LED4 www.national.com 19 |
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