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LP5527TL 数据表(PDF) 19 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LP5527TL
功能描述  Tiny LED Driver for Camera Flash and 4 LEDs with I2C Programmability, Connectivity Test and Audio Synchronization
PDF  21 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LP5527TL 数据表(HTML) 19 Page - National Semiconductor (TI)

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Recommended External
Components
OUTPUT CAPACITOR, C
OUT1,COUT2
The output capacitors C
OUT1,COUT2 directly affect the mag-
nitude of the output ripple voltage. In general, the higher the
value of C
OUT, the lower the output ripple magnitude. Multi-
layer ceramic capacitors with low ESR are the best choice.
At the lighter loads, the low ESR ceramics offer a much
lower V
OUT ripple that the higher ESR tantalums of the same
value. At the higher loads, the ceramics offer a slightly lower
V
OUT ripple magnitude than the tantalums of the same value.
However, the dv/dt of the V
OUT ripple with the ceramics is
much lower that the tantalums under all load conditions.
Capacitor voltage rating must be sufficient, 10V is recom-
mended
Some ceramic capacitors, especially those in small
packages, exhibit a strong capacitance reduction with
the increased applied voltage. The capacitance value
can fall to below half of the nominal capacitance. Too
low output capacitance can make the boost converter
unstable.
INPUT CAPACITOR, C
IN
The input capacitor C
IN directly affects the magnitude of the
input ripple voltage and to a lesser degree the V
OUT ripple. A
higher value C
IN will give a lower VIN ripple. Capacitor volt-
age rating must be sufficient, 10V or greater is recom-
mended.
OUTPUT DIODE, D
1
The output diode for a boost converter must be chosen
correctly depending on the output voltage and the output
current. The diode must be rated for a reverse voltage
greater than the output voltage used. The average current
rating must be greater than the maximum load current ex-
pected, and the peak current rating must be greater than the
peak inductor current (~1.6A at maximum load). A Schottky
diode should be used for the output diode. Schottky diodes
with a low forward voltage drop (V
F) and fast switching
speeds are ideal for increasing efficiency in portable appli-
cations. Do not use ordinary rectifier diodes, since slow
switching speeds and long recovery times cause the effi-
ciency and the load regulation to suffer. In Schottky barrier
diodes reverse leakage current increases quickly with the
junction temperature. Therefore, reverse power dissipation
and the possibility of thermal runaway has to be considered
when operating under high temperature conditions. Ex-
amples of suitable diodes are Diodes Incorporated type
DFLS220L, ON Semiconductor type MBRA210LT3 and Phil-
ips type PMEG1020.
INDUCTOR, L
1
The LP5527 high switching frequency enables the use of the
small surface mount inductor. A 4.7 µH shielded inductor is
suggested for 2 MHz switching frequency. The inductor
should have a saturation current rating higher than the peak
current it will experience during circuit operation (~1.7A at
maximum load). Less than 300 m
Ω ESR is suggested for
high efficiency. Open core inductors cause flux linkage with
circuit components and interfere with the normal operation of
the circuit. This should be avoided. For high efficiency,
choose an inductor with a high frequency core material such
as ferrite to reduce the core losses. To minimize radiated
noise, use a toroid, pot core or shielded core inductor. The
inductor should be connected to the SW1 and SW2 pins as
close to the I
C as possible. Example of a suitable inductor is
TDK type VLCF5020T-4R7N1R7-1.
Table List of Recommended External Components
Symbol
Symbol Explanation
Value
Unit
Type
C
VDD1
V
DD1 Bypass Capacitor
100
nF
Ceramic, X5R
C
VDD2
V
DD2 Bypass Capacitor
100
nF
Ceramic, X5R
C
OUT1,2
Output Capacitors from FB to GND
2 x 10 µF ± 10%
µF
Ceramic, X5R, 10V
C
IN
Input Capacitor from Battery Voltage to GND
10 ± 10%
µF
Ceramic, X5R, 10V
C
VDDIO
V
DD_IO Bypass Capacitor
100
nF
Ceramic, X5R
C
VDDA
V
DDA Bypass Capacitor
4.7
µF
Ceramic, X5R, 6.3V
C
1,2
Audio Input Capacitors
47
nF
Ceramic, X5R
RT
Oscillator Frequency Bias Resistor
82
k
1%
RF
Flash Current Set Resistor for 400 mA Sink
Current
1200
1%
C
VREF
Reference Voltage Capacitor, between V
REF
and GND
100
nF
Ceramic, X5R
L
1
Boost Converter Inductor
4.7
µH
Shielded, low ESR,
I
SAT
~1.7A
D
1
Rectifying Diode, V
F @ maxload
0.35
V
Schottky diode
Flash LED
User defined
LED1 to LED4
www.national.com
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