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SC1109BSTR 数据表(PDF) 3 Page - Semtech Corporation |
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SC1109BSTR 数据表(HTML) 3 Page - Semtech Corporation |
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3 / 19 page ![]() 3 2004 Semtech Corp. www.semtech.com POWER MANAGEMENT SC1109 r e t e m a r a Pl o b m y Ss n o i t i d n o CN I MP Y TX A MS T I N U s r e v i r D l a n r e t n I t n e r r u C e c r u o S H D k a e Pe c r u o s I H D V 5 . 4 = H D - T S B0 0 5A m t n e r r u C k n i S H D k a e Pk n i s I H D V 1 . 3 = E S A H P - H D0 0 5A m V 5 . 1 = E S A H P - H D0 0 1A m t n e r r u C e c r u o S L D k a e Pe c r u o s I L D V 5 . 4 = L D - C C V0 0 5A m t n e r r u C k n i S L D k a e Pk n i s I L D V 1 . 3 = D N G - L D0 0 5A m V 5 . 1 = D N G - L D0 0 1A m e m it d a e DT D A E D 0 40 0 1s n s n o i t c e S r a e n i L e g a tl o V y b d n a t SV Y B T S 4 . 45 5 2 . 5V t n e r r u c t n e c s e i u Q y b d n a t SI Q Y B D T S V 0 = N E / S S , V 5 = Y B T S V9 A m e c n e r e ff i D g n i k c a r T ) 4 ( ) 1 ( a tl e D K C A R T 0 0 2V m 1 O D L e g a tl o V t u p t u OV 1 O D L I O V 3 . 3 = n i V , A 4 o t 0 =2 8 7 . 18 1 8 . 14 5 8 . 1V 2 O D L e g a tl o V t u p t u OV 2 O D L I O V 3 . 3 = n i V , A 4 o t 0 =0 7 4 . 10 0 5 . 10 3 5 . 1V n o it a l u g e R d a o LD A O L G E R I O V 3 . 3 = n i V , A 4 o t 0 =3 . 0% n o it a l u g e R e n i LE N I L G E R V 7 4 . 3 o t V 3 1 . 3 = n i V , A 2 = o I3 . 0% e c n a d e p m I t u p n I ) 2 , 1 ( S O D L ) 3 ( Z N I 0 1k Ω ) L O A ( n i a G ) 3 ( N I A G O D L ) 2 , 1 ( E T A G o t ) 2 , 1 ( S O D L0 5B d Electrical Characteristics (Cont.) Notes: (1) All electrical characteristics are for the application circuit on page 16. (2) Soft start function is performed after Vcc is above the UVLO and SS/EN is above 600mV. The Soft start capacitor is then charged at a 10uA constant current until SS/EN is charged to above 1V. (3) Guaranteed by design (4) Tracking Difference is defined as the delta between 3.3V Vin and the LDO1, LDO2 output voltages during the linear ramp up until regulation is achieved. The tracking voltage difference might vary depending on MOSFETs RdS ON, and load conditions. (5) This device is ESD sensitive. Use of standard ESD handling precautions is required. Unless specified: VOSENSE = V O; Vcc=4.75V to 5.25V; STBY=4.75V to 5.25V; BST = 11.4V to 12.6V; TA = 0 to 70°C |
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