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BCR08AS 数据表(PDF) 3 Page - Powerex Power Semiconductors

部件名 BCR08AS
功能描述  LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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制造商  POWEREX [Powerex Power Semiconductors]
网页  http://www.pwrx.com
标志 POWEREX - Powerex Power Semiconductors

BCR08AS 数据表(HTML) 3 Page - Powerex Power Semiconductors

  BCR08AS Datasheet HTML 1Page - Powerex Power Semiconductors BCR08AS Datasheet HTML 2Page - Powerex Power Semiconductors BCR08AS Datasheet HTML 3Page - Powerex Power Semiconductors BCR08AS Datasheet HTML 4Page - Powerex Power Semiconductors BCR08AS Datasheet HTML 5Page - Powerex Power Semiconductors  
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Mar. 2002
100
23
100
57 101 23 5 7 102 23 5 7 103
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
VGM = 10V
VGT
PGM = 1W
PG(AV)
= 0.1W
IGM = 1A
VGD = 0.2V
IFGT III
IFGT I,
IRGT I, IRGT III
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
VRGT I VRGT III
VFGT I VFGT III
TYPICAL EXAMPLE
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
IFGT I IRGT III IRGT I
IFGT III
TYPICAL EXAMPLE
2.0
1.6
1.2
0.8
0.4
0
2.0
0
0.4
0.8
1.2
1.6
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
1.6
0
0.2
0.6
1.0
1.4
40
80
140
0.4
0.8
1.2
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL CONVECTION
101
23
10–1
57 100 23 5 7 101 23 5 7 102
103
7
5
3
2
102
7
5
3
2
7
5
3
2
100
23
102
57 103 23 5 7 104 23 5 7 105
JUNCTION TO AMBIENT
JUNCTION TO CASE
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE



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