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BCR08AS 数据表(PDF) 4 Page - Powerex Power Semiconductors |
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BCR08AS 数据表(HTML) 4 Page - Powerex Power Semiconductors |
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4 / 5 page ![]() Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 103 7 5 3 2 102 7 5 3 2 101 LACHING CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) HOLDING CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) COMMUTATION CHARACTERISTICS RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/ µs) 160 100 80 40 20 0 140 40 –40 –60 –20 0 20 60 80 140 100 120 60 120 TYPICAL EXAMPLE 140 40 –40 –60 –20 0 20 60 80 100 120 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 TYPICAL EXAMPLE 140 40 –40 –60 –20 0 20 60 80 100 120 23 100 57 101 23 5 7 102 23 5 7 103 120 0 20 40 60 80 100 140 160 Tj = 125 °C TYPICAL EXAMPLE I QUADRANT III QUADRANT 160 –40 0 40 80 120 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 T2 +, G– TYPICAL EXAMPLE TYPICAL EXAMPLE DISTRIBUTION T2 +, G+ T2 – , G– T2 – , G+ TYPICAL EXAMPLE Tj = 125 °C IT = 1A τ = 500µs VD = 200V f = 3Hz I QUADRANT III QUADRANT MINIMUM CHARAC- TERISTICS VALUE TYPICAL EXAMPLE 10–1 23 5 7 100 100 7 5 3 2 23 5 7 101 101 7 5 3 2 10–1 |
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