G1K1P06LL

www.gofordsemi.com

TEL：0755-29961263

FAX:0755-29961466（A1731-V1.0）

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

-60

V

Continuous Drain Current

ID

-3

A

Pulsed Drain Current

(note1)

IDM

-12

A

Gate-Source Voltage

VGS

±

20

V

Power Dissipation

PD

1.5

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 To 150

ºC

Thermal Resistance

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-Ambient

RthJA

83.3

ºC/W

P-Channel Enhancement Mode Power MOSFET

Description

The G1K1P06LL uses advanced trench technology to

provide excellent RDS(ON) , low gate charge. It can be used in

a wide variety of applications.

General Features

l

VDS

-60V

l

ID (at VGS = -10V)

-3A

l

RDS(ON) (at VGS = -10V)

< 110mΩ

l

RDS(ON) (at VGS = -4.5V)

< 130mΩ

l

100% Avalanche Tested

l

RoHS Compliant

Application

l

Power switch

l

DC/DC converters

Ordering Information

Device

Package

Marking

Packaging

G1K1P06LL

SOT-23-6

G1K1P06

3000pcs/Reel

Schematic diagram

SOT-23-6L