G1K1P06LL

www.gofordsemi.com

TEL：0755-29961263

FAX:0755-29961466（A1731-V1.0）

Specifications TJ = 25ºC, unless otherwise noted

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static Parameters

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250µA

-60

--

--

V

Zero Gate Voltage Drain Current

IDSS

VDS = -60V, VGS = 0V

--

--

-1

μA

Gate-Source Leakage

IGSS

VGS = ±20V

--

--

±

100

nA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250µA

-1

-1.8

-2.5

V

Drain-Source On-Resistance

RDS(on)

VGS = -10V, ID = -2A

--

85

110

mΩ

VGS = -4.5V, ID = -1A

--

105

130

gFS

VDS = -5V,ID = -2A

--

6

--

S

Dynamic Parameters

Input Capacitance

Ciss

VGS = 0V,

VDS = -30V,

f = 1.0MHz

--

1035

--

pF

Output Capacitance

Coss

--

54

--

Reverse Transfer Capacitance

Crss

--

45

--

Total Gate Charge

Qg

VDD = -30V,

ID = -2A,

VGS = -10V

--

25

--

nC

Gate-Source Charge

Qgs

--

3

--

Gate-Drain Charge

Qgd

--

7

--

Turn-on Delay Time

td(on)

VDD = -30V,

ID = -2A,

RG = 3Ω

--

8

--

ns

Turn-on Rise Time

tr

--

4

--

Turn-off Delay Time

td(off)

--

32

--

Turn-off Fall Time

tf

--

7

--

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

IS

TC = 25ºC

--

--

-3

A

Body Diode Voltage

VSD

TJ = 25ºC, ISD = -2A, VGS = 0V

--

--

-1.2

V

Reverse Recovery Charge

Qrr

IF = -2A, VGS = 0V

di/dt=-100A/us

--

31

--

nC

Reverse Recovery Time

Trr

--

25

--

ns

Notes

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Identical low side and high side switch with identical RG

Forward Transconductance