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M41T94 数据表(PDF) 16 Page - STMicroelectronics |
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M41T94 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 41 page ![]() Operation M41T94 16/41 3.2 Read and write cycles Address and data are shifted MSB first into the Serial Data Input (SDI) and out of the Serial Data Output (SDO). Any data transfer considers the first bit to define whether a READ or WRITE will occur. This is followed by seven bits defining the address to be read or written. Data is transferred out of the SDO for a READ operation and into the SDI for a WRITE operation. The address is always the second through the eighth bit written after the Enable (E) pin goes low. If the first bit is a '1,' one or more WRITE cycles will occur. If the first bit is a '0,' one or more READ cycles will occur (see Figure Figure 9 on page 17 and Figure 10 on page 17). Data transfers can occur one byte at a time or in multiple byte burst mode, during which the address pointer will be automatically incremented. For a single byte transfer, one byte is read or written and then E is driven high. For a multiple byte transfer all that is required is that E continue to remain low. Under this condition, the address pointer will continue to increment as stated previously. Incrementing will continue until the device is deselected by taking E high. The address will wrap to 00h after incrementing to 3Fh. The system-to-user transfer of clock data will be halted whenever the address being read is a clock address (00h to 07h). Although the clock continues to maintain the correct time, this will prevent updates of time and date during either a READ or WRITE of these address locations by the user. The update will resume either due to a deselect condition or when the pointer increments to an non-clock or RAM address (08h to 3Fh). Note: This is true both in READ and WRITE mode. 3.3 Data retention mode With valid VCC applied, the M41T94 can be accessed as described above with READ or WRITE cycles. Should the supply voltage decay, the M41T94 will automatically deselect, write protecting itself when VCC falls between VPFD (max) and VPFD (min) (see Figure 17 on page 32). At this time, the reset pin (RST) is driven active and will remain active until VCC returns to nominal levels. When VCC falls below the switch-over voltage (VSO), power input is switched from the VCC pin to the SNAPHAT battery (or external battery for SO16) at this time, and the clock registers are maintained from the attached battery supply. All outputs become high impedance. On power up, when VCC returns to a nominal value, write protection continues for tREC by internally inhibiting E. The RST signal also remains active during this time (see Figure 17 on page 32). Before the next active cycle, Chip Enable should be taken high for at least tEHEL, then low. For a further more detailed review of battery lifetime calculations, please see Application Note AN1012. |
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