High Speed CMOS Logic – 54HC03

 

 

DC Electrical Characteristics (Voltages Referenced to GND)

Rev 1.0

16/04/18

LIMITS

PARAMETER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

VCC

CONDITIONS

UNITS

25°C

85°C

FULL RANGE

4

2.0V

0.1

0.1

0.1

4.5V

0.1

0.1

0.1

VIN = VIH

│IOUT│≤ 20µA

6.0V

0.1

0.1

0.1

4.5V

VIN = VIH

│IOUT│≤ 4.0mA

0.26

0.33

0.40

Maximum Low-Level

Output Voltage

VOL

V

6.0V

VIN = VIH

│IOUT│≤ 5.2mA

0.26

0.33

0.40

Maximum Input

Leakage Current

IIN

6.0V

VIN = VCC or GND

±0.1

±1.0

±1.0

µA

Maximum 3-State

leakage current

IOZ

6.0V

VOUT=VCC or GND

VIN = VIL or VIH

±0.5

±5.0

±10

µA

Maximum Quiescent

Supply Leakage

Current

ICC

6.0V

VIN = VCC or GND

IOUT = 0µA

1

10

40

µA

AC Electrical Characteristics5

LIMITS

PARAMETER

SYMBOL

VCC

CONDITIONS

UNITS

25°C

85°C

FULL RANGE

4

2.0V

120

150

180

4.5V

24

30

36

Maximum

Propagation Delay,

CL = 50pF,

A or B to Y

(Figures 2,4)

tPLZ, tPZL

ns

tr = tf = 6ns

6.0V

20

26

31

2.0V

75

95

110

4.5V

15

19

22

Maximum

Output Transition Time,

CL = 50pF,

any Output

(Figures 2,4)

tTHL

ns

tr = tf = 6ns

6.0V

13

16

19

Maximum Input

Capacitance

CIN

-

-

10

10

10

pF

Maximum Three-State

Output Capacitance

(Output in High-

Impedance State)

COUT

-

-

10

10

10

pF

TYPICAL

Power Dissipation

TA = 25°C,

pF

Capacitance

(Per Gate)

6

CPD

-

VCC = 5.0V

8

 

5. Not production tested in die form, characterized by chip design and tested in package LAT.

6. Used to determine the no-load dynamic power consumption: PD = CPD VCC

2f + ICC VCC.

Page 4 of 5 

www.siliconsupplies.com