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PARAMETER

SYMBOL

MIN

MAX

UNITS

DC Supply Voltage

VCC

2

6

V

DC Input or Output Voltage

VIN ,VOUT

0

VCC

V

Operating Temperature Range

TJ

-55

+125

°C

VCC = 2.0V

0

1000

VCC = 4.5V

0

500

Input Rise and Fall Time

VCC = 6.0V

tr, tf

0

400

ns

Recommended Operating Conditions3 (Voltages referenced to GND)

Absolute Maximum Ratings1

PARAMETER

SYMBOL

VALUE

UNIT

DC Supply Voltage (Referenced to GND)

VCC

-0.5 to +7.0

V

DC Input Voltage (Referenced to GND)

VIN

-1.5 to VCC +1.5

V

DC Output Voltage (Referenced to GND)

VOUT

-0.5 to VCC +0.5

V

DC Input Current, per pin

IIN

±20

mA

DC Output Current, per pin

IOUT

±25

mA

DC VCC or GND Current, per pin

ICC

±50

mA

Power Dissipation in Still Air

2

PD

750

mW

Storage Temperature Range

TSTG

-65 to 150

°C

High Speed CMOS Logic – 54HC03

Rev 1.0

16/04/18

1.  Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may

reduce device reliability. 2. Measured in plastic DIP package, results in die form are dependent on die attach and assembly method.

3.  This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be

taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT

should be constrained to the range GND ≤ (VIN or VOUT) ≤ VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either

GND or VCC). Unused outputs must be left open.

LIMITS

PARAMETER

SYMBOL

VCC

CONDITIONS

25°C

85°C

FULL RANGE

4

UNITS

2.0V

1.5

1.5

1.5

4.5V

3.15

3.15

3.15

Minimum High-

Level Input Voltage

VIH

6.0V

VOUT = 0.1V or

VCC -0.1V

│IOUT│≤ 20µA

4.2

4.2

4.2

V

2.0V

0.5

0.5

0.5

4.5V

1.35

1.35

1.35

Maximum Low-

Level Input Voltage

VIL

6.0V

VOUT = 0.1V or

VCC -0.1V

│IOUT│≤ 20µA

1.8

1.8

1.8

V

DC Electrical Characteristics (Voltages Referenced to GND)

4. −55˚C ≤ TJ ≤ +125˚C