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F6626 数据表(PDF) 3 Page - Allegro MicroSystems |
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F6626 数据表(HTML) 3 Page - Allegro MicroSystems |
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3 / 8 page ![]() STR-G665 3 OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR ELECTRICAL CHARACTERISTICS at T A = +25°C, VIN = 18 V, V DD = 10 V, VS = 0, voltage mea- surements are referenced to ground terminal (unless otherwise specified). Limits Characteristic Symbol Test Conditions Min. Typ. Max. Units On-State Voltage V INT Turn-on, increasing V IN 14.4 16 17.6 V Under-Voltage Lockout V INQ Turn-off, decreasing V IN 9.0 10 11 V Over-Voltage Threshold V OVP(th) Turn-off, increasing V IN 20.5 22.5 24.5 V Drain-Source Breakdown Voltage V (BR)DSS I D = 300 µA 650 – – V Drain Leakage Current I DSS V DS = 650 V – – 300 µA On-State Resistance r DS(on) V S = 10 V, ID = 0.9 A, TJ = +25°C – – 1.9 Ω Maximum OFF Time t off Drain waveform high 45 – 55 µs Minimum Pulse Duration for Input of Quasi-Resonant Signals t w(th) Drain waveform high1 – – 1.0 µs Minimum OFF Time t off Drain waveform high1 – – 1.5 µs Feedback Threshold Voltage V FDBK Drain waveform low to high1 0.68 0.73 0.78 V Oscillation synchronized2 1.3 1.45 1.6 V Over-Current Protection/Feedback Sink Current I OCP/FB V OCP/FB = 1.0 V 1.2 1.35 1.5 mA Latch Holding Current I IN(OVP) V IN reduced from 24.5 V to 8.5 V – – 400 mA Latch Release Voltage V IN I IN ≤ 20 µA, VIN reduced from 24.5 V 6.6 – 8.4 V Switching Time t f V DD = 200 V, ID = 0.9 A – – 250 ns Supply Current I IN(ON) Operating3 –– 30 mA I IN(OFF) Increasing V IN prior to oscillation – – 100 µA Insulation RMS Voltage V WM(RMS) All terminals simultaneous refer- 2000 – – V ence metal plate against backside Thermal Shutdown T J 140 – – °C Thermal Resistance RθJM Output junction-to-mounting frame – – 1.63 °C/W Notes: Typical Data is for design information only. 1. Feedback is square wave, V IM = 2.2 V, th = 1 µs, tl = 35 µs 2. For quasi-resonant operation, the input signal must be longer than t w(th) and greater than VFDBK 3. Feedback is square wave, V IM = 2.2 V, th = 4 µs, tl = 1 µs |
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