The STR-G665

3 is specifically designed to satisfy the requirements

for increased integration and reliability in off-line quasi-resonant flyback

converters. This device incorporates the primary control and drive

circuit with a discrete avalanche-rated power MOSFET.

Cycle-by-cycle current limiting, under-voltage lockout with hyster-

esis, over-voltage protection, and thermal shutdown protects the power

supply during the normal overload and fault conditions. Over-voltage

protection and thermal shutdown are latched after a short delay. The

latch may be reset by cycling the input supply. Low-current startup and

a low-power standby mode selected from the secondary circuit completes

a comprehensive suite of features. The device is provided in a five-pin

over-molded TO-220 style package, affording dielectric isolation without

compromising thermal characteristics.

Proven in substantial volumes, the STR-G665

3 is a robust low-risk

solution for off-line power supplies particularly where management of

EMI at the source is a significant element of the system design.

FEATURES

s Quasi-Resonant Operation

s Output Power to

120 W

s Low-Loss, Pulse-Ratio-Control Standby Mode

s Temperature-Compensated Pulse-by-Pulse Over-Current Protection

s Latched Over-Voltage and Thermal Protection

s Under-Voltage Lockout with Hysteresis

s Active Low-Pass Filter for Enhanced Light-Load Stability

s Switched Attenuation of Leading-Edge Current-Sensing Signal

s Regulated Soft Gate Drive

s Adjustable Switching Speed for EMI Control

s Overmolded Five-Pin Package

OFF-LINE QUASI-RESONANT

FLYBACK SWITCHING REGULATOR

Always order by complete part number: STR-G665

3 .

™

STR-G665

3

ABSOLUTE MAXIMUM RATINGS

at T

A = +25°C

Control Supply Voltage, V

IN . . . . . . .

35 V

Drain-Source Voltage, V

DS . . . . . . . .

650 V

Drain Current, I

D

continuous . . . . . . . . . . . . . . . . . .

2.7 A

single-pulse, t

w ≤ 1 ms . . . . . . . .

7.2 A

Avalanche Energy, E

AS

single-pulse . . . . . . . . . . . . . . .

158 mJ

Over-Current Protection Voltage Range,

V

OCP . . . . . . . . . . . . . . .

-0.3 V to +6 V

Insulation RMS Voltage,

V

WM(RMS) . . . . . . . . . . . . . . . . . .

2000 V

Package Power Dissipation, P

D

control (V

IN x IIN(ON)) . . . . . . . . .

0.8 W

total . . . . . . . . . . . . . . . . . . . See Graph

FET Channel Temperature, T

J . . .

+150

°C

Internal Frame Temperature, T

F . .

+125

°C

Operating Temperature Range,

T

A . . . . . . . . . . . . . . .

-20

°C to +125°C

Storage Temperature Range,

T

S . . . . . . . . . . . . . . .

-40

°C to +125°C

Dwg. PK-011

UVLO

OVP

TSD

LATCH

OSC.

FDBK