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GD400CEX170C2S 数据表(PDF) 3 Page - StarPower Europe AG |
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GD400CEX170C2S 数据表(HTML) 3 Page - StarPower Europe AG |
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3 / 9 page ![]() GD400CEX170C2S IGBT Module ©2023 STARPOWER Semiconductor Ltd. 1/10/2023 3/9 preliminary IGBT Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=400A,VGE=15V, Tj=25 oC 1.85 2.20 V IC=400A,VGE=15V, Tj=125 oC 2.25 IC=400A,VGE=15V, Tj=150 oC 2.35 VGE(th) Gate-Emitter Threshold Voltage IC=16.0mA,VCE=VGE, Tj=25 oC 5.6 6.2 6.8 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance 1.88 Ω Cies Input Capacitance VCE=25V,f=1MHz, VGE=0V 48.2 nF Cres Reverse Transfer Capacitance 1.17 nF QG Gate Charge VGE=-15V…+15V 3.77 μC td(on) Turn-On Delay Time VCC=900V,IC=400A, RG=0.82Ω,VGE=±15V, Tj=25 oC 204 ns tr Rise Time 38 ns td(off) Turn-Off Delay Time 425 ns tf Fall Time 113 ns Eon Turn-On Switching Loss 97.9 mJ Eoff Turn-Off Switching Loss 84.0 mJ td(on) Turn-On Delay Time VCC=900V,IC=400A, RG=0.82Ω,VGE=±15V, Tj=125 oC 208 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 528 ns tf Fall Time 184 ns Eon Turn-On Switching Loss 141 mJ Eoff Turn-Off Switching Loss 132 mJ td(on) Turn-On Delay Time VCC=900V,IC=400A, RG=0.82Ω,VGE=±15V, Tj=150 oC 216 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 544 ns tf Fall Time 204 ns Eon Turn-On Switching Loss 161 mJ Eoff Turn-Off Switching Loss 137 mJ ISC SC Data tP≤10μs,VGE=15V, Tj=150 oC,VCC=1000V, VCEM≤1700V 1600 A |
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