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GD400CEX170C2S 数据表(PDF) 4 Page - StarPower Europe AG |
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GD400CEX170C2S 数据表(HTML) 4 Page - StarPower Europe AG |
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4 / 9 page ![]() GD400CEX170C2S IGBT Module ©2023 STARPOWER Semiconductor Ltd. 1/10/2023 4/9 preliminary Diode Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=400A,VGE=0V,Tj=25 oC 1.80 2.25 V IF=400A,VGE=0V,Tj=125 oC 1.90 IF=400A,VGE=0V,Tj=150 oC 1.95 Qr Recovered Charge VR=900V,IF=400A, -di/dt=8800A/μs,VGE=-15V Tj=25 oC 116 μC IRM Peak Reverse Recovery Current 666 A Erec Reverse Recovery Energy 63.8 mJ Qr Recovered Charge VR=900V,IF=400A, -di/dt=8800A/μs,VGE=-15V Tj=125 oC 187 μC IRM Peak Reverse Recovery Current 662 A Erec Reverse Recovery Energy 114 mJ Qr Recovered Charge VR=900V,IF=400A, -di/dt=8800A/μs,VGE=-15V Tj=150 oC 209 μC IRM Peak Reverse Recovery Current 640 A Erec Reverse Recovery Energy 132 mJ Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 20 nH RCC’+EE’ Module Lead Resistance, Terminal to Chip 0.35 mΩ RthJC Junction-to-Case (per IGBT) Junction-to-Case (per Diode) 0.063 0.105 K/W RthCH Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) 0.032 0.053 0.010 K/W M Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 2.5 3.0 5.0 5.0 N.m G Weight of Module 300 g |
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