TPCF8301 datasheet(1/7 Pages) TOSHIBA

部件名	TPCF8301

功能描述	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

PDF	7 Pages

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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1 / 7 page

TPCF8301

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPCF8301

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 4.7 S (typ.)

• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)

• Enhancement model: Vth = −0.5 to −1.2 V

(VDS = −10 V, ID = −200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

−20

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−20

V

Gate-source voltage

VGSS

±8

V

DC

(Note 1)

ID

−2.7

Drain current

Pulse

(Note 1)

IDP

−10.8

A

Single-device operation

(Note 3a)

PD (1)

1.35

Drain power

dissipation

(t

= 5 s) (Note 2a) Single-device value at

dual operation (Note 3b)

PD (2)

1.12

Single-device operation

(Note 3a)

PD (1)

0.53

Drain power

dissipation

(t

= 5 s) (Note 2b) Single-device value at

dual operation (Note 3b)

PD (2)

0.33

W

Single pulse avalanche energy

(Note 4)

EAS

1.2

mJ

Avalanche current

IAR

−1.35

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR

0.11

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1B

Weight: 0.011 g (typ.)

Circuit Configuration

8

7

6

5

1

2

3

4

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